MURH10010 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 100A D-67
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: D-67
Current - Average Rectified (Io): 100A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D-67
Packaging: Bulk
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Technische Details MURH10010 GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 100A D-67, Current - Reverse Leakage @ Vr: 25 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 100 V, Supplier Device Package: D-67, Current - Average Rectified (Io): 100A, Technology: Standard, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: D-67, Packaging: Bulk.
Weitere Produktangebote MURH10010
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MURH10010 | Hersteller : GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV D-67 50-600V 100A100P/70R |
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