MURT10040R GeneSiC Semiconductor
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Technische Details MURT10040R GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 50A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 90 ns, Technology: Standard, Reverse Polarity, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 50A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.
Weitere Produktangebote MURT10040R
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MURT10040R | Hersteller : GeneSiC Semiconductor |
 Description: DIODE MODULE GP 400V 50A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURT10040R | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V100A400P/283R |
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