MURT20020R GeneSiC Semiconductor

Description: DIODE MODULE GP 200V 100A 3TOWER, Current - Reverse Leakage @ Vr: 25 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 100A, Diode Configuration: 1 Pair Common Anode, Technology: Standard, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.