MURT20060R GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 100A 3TOWER
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
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Technische Details MURT20060R GeneSiC Semiconductor
Description: DIODE MODULE 600V 100A 3TOWER, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 100A, Diode Configuration: 1 Pair Common Anode, Technology: Standard, Reverse Recovery Time (trr): 160 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk, Current - Reverse Leakage @ Vr: 25 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C.
Weitere Produktangebote MURT20060R
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MURT20060R | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V200A600P/424R |
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