MURTA20060 Navitas Semiconductor, Inc.
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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Technische Details MURTA20060 Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 100A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A, Current - Reverse Leakage @ Vr: 25 µA @ 600 V.
Weitere Produktangebote MURTA20060
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
MURTA20060 | GeneSiC Semiconductor |
Diode Modules 600V 200A Si Super Fast Recovery |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MURTA20060 |
|
Hersteller: GeneSiC Semiconductor
Diode Modules 600V 200A Si Super Fast Recovery
Diode Modules 600V 200A Si Super Fast Recovery
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH