 
MURTA400120 DACO Semiconductor
 Hersteller: DACO Semiconductor
                                                Hersteller: DACO SemiconductorDescription: DIODE MODULE GEN PURP 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 1+ | 184.64 EUR | 
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Technische Details MURTA400120 DACO Semiconductor
Description: DIODE MOD GP 1200V 200A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 200A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A, Current - Reverse Leakage @ Vr: 25 µA @ 1200 V. 
Weitere Produktangebote MURTA400120
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | 
|---|---|---|---|---|---|
| MURTA400120 | Hersteller : GeneSiC Semiconductor |  Silicon Super Fast Recovery Diode | Produkt ist nicht verfügbar | ||
|   | MURTA400120 | Hersteller : GeneSiC Semiconductor |  Description: DIODE MOD GP 1200V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V | Produkt ist nicht verfügbar | |
|   | MURTA400120 | Hersteller : GeneSiC Semiconductor |  Diode Modules 1200V 400A Si Super Fast Recovery | Produkt ist nicht verfügbar |