MURTA600120R GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
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Technische Details MURTA600120R GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER, Current - Reverse Leakage @ Vr: 25 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 300A, Diode Configuration: 1 Pair Common Anode, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Weitere Produktangebote MURTA600120R
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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MURTA600120R | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 600A Si Super Fast Recovery |
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