MWI50-12A7

IGBT-шестерка, Vces=1200V, Ic25=85A, Ic80=60A, Vce(sat)=2.2V Силові IGBT-модулі

Hersteller: IXYS
Description: IGBT MODULE 1200V 85A 350W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: E2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V

Hersteller: IXYS
IGBT Modules 50 Amps 1200V