Weitere Produktangebote NDH8521C nach Preis ab 1.44 EUR bis 2.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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NDH8521C | ONSEMI |
Description: ONSEMI - NDH8521C - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NDH8521C | Fairchild Semiconductor |
Description: MOSFET N/P-CH 30V 3.8A SUPERSOTPackaging: Bulk Package / Case: 8-TSOP (0.130", 3.30mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 2.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 560pF @ 15V Rds On (Max) @ Id, Vgs: 33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 27nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SuperSOT™-8 Part Status: Active |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDH8521C |
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Hersteller: ONSEMI
Description: ONSEMI - NDH8521C - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - NDH8521C - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 472+ | 2.03 EUR |
| NDH8521C |
![]() |
Hersteller: Fairchild Semiconductor
Description: MOSFET N/P-CH 30V 3.8A SUPERSOT
Packaging: Bulk
Package / Case: 8-TSOP (0.130", 3.30mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 560pF @ 15V
Rds On (Max) @ Id, Vgs: 33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 27nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSOT™-8
Part Status: Active
Description: MOSFET N/P-CH 30V 3.8A SUPERSOT
Packaging: Bulk
Package / Case: 8-TSOP (0.130", 3.30mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 560pF @ 15V
Rds On (Max) @ Id, Vgs: 33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 27nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSOT™-8
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 392+ | 1.44 EUR |


