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NDS352P

NDS352P Fairchild Semiconductor

FAIRS34585-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: MOSFET P-CH 20V 850MA SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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Technische Details NDS352P Fairchild Semiconductor

Description: MOSFET P-CH 20V 850MA SUPERSOT3, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 850mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

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NDS352P NDS352P Hersteller : onsemi NDS352P.pdf Description: MOSFET P-CH 20V 850MA SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDS352P NDS352P Hersteller : onsemi NDS352P.pdf Description: MOSFET P-CH 20V 850MA SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDS352P NDS352P Hersteller : onsemi / Fairchild NDS352P.pdf FAIRS34585-1.pdf?t.download=true&u=5oefqw MOSFET SSOT-3 P-CH 20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH