NDS8858H ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - NDS8858H - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details NDS8858H ONSEMI
Description: MOSFET N/P-CH 30V 6.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.8A, Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V, Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote NDS8858H nach Preis ab 1.19 EUR bis 1.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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NDS8858H | ON Semiconductor |
Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC T/R |
auf Bestellung 1992 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS8858H | ON Semiconductor |
Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC T/R |
auf Bestellung 9841 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS8858H | Fairchild Semiconductor |
Description: MOSFET N/P-CH 30V 6.3A 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.8A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC |
auf Bestellung 11833 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDS8858H | FAI |
07+ SO-8 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NDS8858H |
|
Hersteller: ON Semiconductor
Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC T/R
Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC T/R
auf Bestellung 1992 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 446+ | 1.48 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.19 EUR |
| NDS8858H |
|
Hersteller: ON Semiconductor
Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC T/R
Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC T/R
auf Bestellung 9841 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 446+ | 1.48 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.19 EUR |
| NDS8858H |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N/P-CH 30V 6.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 30V 6.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 11833 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 356+ | 1.51 EUR |
| NDS8858H |
|
Hersteller: FAI
07+ SO-8
07+ SO-8
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)