Technische Details NDS8947 ON Semiconductor
Description: MOSFET 2P-CH 30V 4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V, Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote NDS8947 nach Preis ab 2.17 EUR bis 2.76 EUR
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NDS8947 | ON Semiconductor |
 Trans MOSFET P-CH 30V 4A 8-Pin SOIC T/R |
auf Bestellung 2909 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS8947 | ON Semiconductor |
Trans MOSFET P-CH 30V 4A 8-Pin SOIC T/R |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS8947 | ON Semiconductor |
Trans MOSFET P-CH 30V 4A 8-Pin SOIC T/R |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS8947 | Fairchild Semiconductor |
Description: MOSFET 2P-CH 30V 4A 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC |
auf Bestellung 6899 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDS8947 | FAI |
07+ SO-8 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NDS8947 |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 4A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 4A 8-Pin SOIC T/R
auf Bestellung 2909 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 244+ | 2.7 EUR |
| 500+ | 2.4 EUR |
| 1000+ | 2.17 EUR |
| NDS8947 |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 4A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 4A 8-Pin SOIC T/R
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 244+ | 2.7 EUR |
| 500+ | 2.4 EUR |
| 1000+ | 2.17 EUR |
| NDS8947 |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 4A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 4A 8-Pin SOIC T/R
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 244+ | 2.7 EUR |
| NDS8947 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET 2P-CH 30V 4A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2P-CH 30V 4A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 6899 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 195+ | 2.76 EUR |
| NDS8947 |
|
Hersteller: FAI
07+ SO-8
07+ SO-8
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)