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Technische Details NDS9430A ON Semiconductor
Description: MOSFET P-CH 20V 5.3A 8SOIC, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta).
Weitere Produktangebote NDS9430A nach Preis ab 1.27 EUR bis 1.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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NDS9430A | ON Semiconductor |
 Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC T/R |
auf Bestellung 7838 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS9430A | ON Semiconductor |
Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC T/R |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS9430A | Fairchild Semiconductor |
Description: MOSFET P-CH 20V 5.3A 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V |
auf Bestellung 10173 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDS9430A | FAI |
07+ SO-8 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NDS9430A |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC T/R
auf Bestellung 7838 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 413+ | 1.59 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.27 EUR |
| NDS9430A |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC T/R
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 413+ | 1.59 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.27 EUR |
| NDS9430A |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET P-CH 20V 5.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Description: MOSFET P-CH 20V 5.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 10173 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 330+ | 1.63 EUR |
| NDS9430A |
|
Hersteller: FAI
07+ SO-8
07+ SO-8
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)