NGTB40N120FL3WG
Produktcode: 133614
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Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote NGTB40N120FL3WG nach Preis ab 4.01 EUR bis 10.56 EUR
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NGTB40N120FL3WG | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3 Collector current: 40A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Features of semiconductor devices: integrated anti-parallel diode Power dissipation: 227W Collector-emitter voltage: 1.2kV Type of transistor: IGBT Kind of package: tube Mounting: THT Gate charge: 212nC |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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NGTB40N120FL3WG | onsemi |
Description: IGBT TRENCH FS 1200V 160A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/145ns Switching Energy: 1.6mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 212 nC Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 454 W |
auf Bestellung 2228 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB40N120FL3WG | onsemi |
IGBTs IGBT 1200V 40A FS3 SOLAR/UPS |
auf Bestellung 2549 Stücke: Lieferzeit 122-126 Tag (e) |
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| NGTB40N120FL3WG |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Power dissipation: 227W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 212nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Power dissipation: 227W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 212nC
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.16 EUR |
| 11+ | 6.84 EUR |
| NGTB40N120FL3WG |
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Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 160A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/145ns
Switching Energy: 1.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 212 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 454 W
Description: IGBT TRENCH FS 1200V 160A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/145ns
Switching Energy: 1.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 212 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 454 W
auf Bestellung 2228 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.93 EUR |
| 30+ | 5.68 EUR |
| 120+ | 4.75 EUR |
| 510+ | 4.06 EUR |
| 1020+ | 4.01 EUR |
| NGTB40N120FL3WG |
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Hersteller: onsemi
IGBTs IGBT 1200V 40A FS3 SOLAR/UPS
IGBTs IGBT 1200V 40A FS3 SOLAR/UPS
auf Bestellung 2549 Stücke:
Lieferzeit 122-126 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 10.56 EUR |
| 10+ | 6.07 EUR |
| 120+ | 5.07 EUR |



