NGTB40N120FL3WG ON Semiconductor
auf Bestellung 21210 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 4.78 EUR |
| 120+ | 3.88 EUR |
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Technische Details NGTB40N120FL3WG ON Semiconductor
Description: IGBT TRENCH FS 1200V 160A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 136 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/145ns, Switching Energy: 1.6mJ (on), 1.1mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 212 nC, Part Status: Active, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 454 W.
Weitere Produktangebote NGTB40N120FL3WG nach Preis ab 3.88 EUR bis 10.47 EUR
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NGTB40N120FL3WG | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 160A 454W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 21210 Stücke: Lieferzeit 14-21 Tag (e) |
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NGTB40N120FL3WG | Hersteller : onsemi |
IGBTs IGBT, Ultra Field Stop -1200V 40A |
auf Bestellung 967 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB40N120FL3WG | Hersteller : onsemi |
Description: IGBT TRENCH FS 1200V 160A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/145ns Switching Energy: 1.6mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 212 nC Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 454 W |
auf Bestellung 210948 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB40N120FL3WG | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 227W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 212nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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NGTB40N120FL3WG | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 227W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 212nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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NGTB40N120FL3WG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 160A 454000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 8190 Stücke: Lieferzeit 14-21 Tag (e) |
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NGTB40N120FL3WG Produktcode: 133614
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Lieblingsprodukt
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Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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NGTB40N120FL3WG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 160A 454W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB40N120FL3WG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 160A 454W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |