NP75P04YLG-E1-AY м/с
Produktcode: 205464
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Weitere Produktangebote NP75P04YLG-E1-AY м/с nach Preis ab 1.51 EUR bis 4.84 EUR
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NP75P04YLG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 75A 8HSONPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP75P04YLG-E1-AY | Renesas Electronics |
MOSFETs Pch Power MOSFET -40V -75A 9.7mohm SON-8 5x6 |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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NP75P04YLG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 75A 8HSONPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 12775 Stücke: Lieferzeit 10-14 Tag (e) |
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| NP75P04YLG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.51 EUR |
| NP75P04YLG-E1-AY |
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Hersteller: Renesas Electronics
MOSFETs Pch Power MOSFET -40V -75A 9.7mohm SON-8 5x6
MOSFETs Pch Power MOSFET -40V -75A 9.7mohm SON-8 5x6
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4.84 EUR |
| 10+ | 3.15 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.78 EUR |
| 2500+ | 1.74 EUR |
| NP75P04YLG-E1-AY |
![]() |
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12775 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.84 EUR |
| 10+ | 3.15 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.85 EUR |
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