NTD20P06L-1G
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Technische Details NTD20P06L-1G
Description: MOSFET P-CH 60V 15.5A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V, Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Weitere Produktangebote NTD20P06L-1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
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NTD20P06L-1G | onsemi |
Description: MOSFET P-CH 60V 15.5A IPAK Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTD20P06L-1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 15.5A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET P-CH 60V 15.5A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH