NTLJD3119CTAG
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Technische Details NTLJD3119CTAG
Description: MOSFET N/P-CH 20V 2.6A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 710mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V, Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-WDFN (2x2).
Weitere Produktangebote NTLJD3119CTAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NTLJD3119CTAG | onsemi |
Description: MOSFET N/P-CH 20V 2.6A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NTLJD3119CTAG | onsemi |
Description: MOSFET N/P-CH 20V 2.6A 6WDFN Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) Supplier Device Package: 6-WDFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A Drain to Source Voltage (Vdss): 20V Power - Max: 710mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTLJD3119CTAG |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTLJD3119CTAG |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 710mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 710mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH