NTLJF3118NTAG
Hersteller:
auf Bestellung 3236 Stücke:
Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details NTLJF3118NTAG
Description: MOSFET N-CH 20V 2.6A 6WDFN, Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-WDFN (2x2), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 700mW (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTLJF3118NTAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NTLJF3118NTAG | onsemi |
Description: MOSFET N-CH 20V 2.6A 6WDFN Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-WDFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTLJF3118NTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 2.6A 6WDFN
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 2.6A 6WDFN
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH