NUR460,133 NXP USA Inc.
Hersteller: NXP USA Inc.Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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Technische Details NUR460,133 NXP USA Inc.
Description: DIODE GEN PURP 600V 4A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 60 ns, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Weitere Produktangebote NUR460,133
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NUR460,133 | Hersteller : NXP USA Inc. |
Description: DIODE GEN PURP 600V 4A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AD Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
Produkt ist nicht verfügbar |
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NUR460,133 | Hersteller : NXP Semiconductors |
Diodes - General Purpose, Power, Switching Ultra Fast Recovery Diode |
Produkt ist nicht verfügbar |