
P4SMA150CA NextGen Components

Description: TVS DIODE 128VWM 207VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 5000000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details P4SMA150CA NextGen Components
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 400W; 150V; 2A; bidirectional; ±5%; SMA; reel,tape; P4SMA, Type of diode: TVS, Peak pulse power dissipation: 0.4kW, Max. off-state voltage: 128V, Breakdown voltage: 150V, Max. forward impulse current: 2A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: SMA, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Manufacturer series: P4SMA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P4SMA150CA
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
P4SMA150CA | Hersteller : Bourns |
![]() |
Produkt ist nicht verfügbar |
|
P4SMA150CA | Hersteller : TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 143V; 2A; bidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 128V Breakdown voltage: 143V Max. forward impulse current: 2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
Produkt ist nicht verfügbar |
||
![]() |
P4SMA150CA | Hersteller : LITTELFUSE |
![]() Description: Diode: TVS; 400W; 150V; 2A; bidirectional; ±5%; SMA; reel,tape; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMA |
Produkt ist nicht verfügbar |
|
P4SMA150CA | Hersteller : EATON ELECTRONICS |
![]() Description: Diode: TVS; 0.4kW; 143÷158V; 2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 128V Breakdown voltage: 143...158V Max. forward impulse current: 2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA |
Produkt ist nicht verfügbar |
||
P4SMA150CA | Hersteller : BOURNS |
![]() Description: Diode: TVS; 0.4kW; 143÷158V; 2A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 128V Breakdown voltage: 143...158V Max. forward impulse current: 2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA |
Produkt ist nicht verfügbar |
||
![]() |
P4SMA150CA | Hersteller : Taiwan Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
P4SMA150CA | Hersteller : Eaton Electronics |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
P4SMA150CA | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
P4SMA150CA | Hersteller : Bourns |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
P4SMA150CA | Hersteller : Bourns |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
P4SMA150CA | Hersteller : YANGJIE TECHNOLOGY |
![]() Description: Diode: TVS; 400W; 150V; 1.9A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 1.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
|
P4SMA150CA | Hersteller : TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 143V; 2A; bidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 128V Breakdown voltage: 143V Max. forward impulse current: 2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
![]() |
P4SMA150CA | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
P4SMA150CA | Hersteller : LITTELFUSE |
![]() Description: Diode: TVS; 400W; 150V; 2A; bidirectional; ±5%; SMA; reel,tape; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
P4SMA150CA | Hersteller : BOURNS |
![]() Description: Diode: TVS; 0.4kW; 143÷158V; 2A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 128V Breakdown voltage: 143...158V Max. forward impulse current: 2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
![]() |
P4SMA150CA | Hersteller : Eaton |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
P4SMA150CA | Hersteller : EIC Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
P4SMA150CA | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
P4SMA150CA | Hersteller : YANGJIE TECHNOLOGY |
![]() Description: Diode: TVS; 400W; 150V; 1.9A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 1.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |