PBLS2024D115 NXP
Hersteller: NXP
Description: NXP - PBLS2024D115 - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details PBLS2024D115 NXP
Description: TRANS PREBIAS 1PNP 1PNP 6-TSOP, Packaging: Bulk, Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 1 PNP Pre-Biased, 1 PNP, Power - Max: 760mW, Current - Collector (Ic) (Max): 100mA, 1.8A, Voltage - Collector Emitter Breakdown (Max): 50V, 20V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A, Current - Collector Cutoff (Max): 1µA, 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 200 @ 1A, 2V, Frequency - Transition: 130MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: 6-TSOP, Part Status: Active.
Weitere Produktangebote PBLS2024D115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PBLS2024D115 | NXP USA Inc. |
Description: TRANS PREBIAS 1PNP 1PNP 6-TSOP Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 PNP Pre-Biased, 1 PNP Power - Max: 760mW Current - Collector (Ic) (Max): 100mA, 1.8A Voltage - Collector Emitter Breakdown (Max): 50V, 20V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A Current - Collector Cutoff (Max): 1µA, 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 200 @ 1A, 2V Frequency - Transition: 130MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: 6-TSOP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PBLS2024D115 |
|
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS 1PNP 1PNP 6-TSOP
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 PNP Pre-Biased, 1 PNP
Power - Max: 760mW
Current - Collector (Ic) (Max): 100mA, 1.8A
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
Current - Collector Cutoff (Max): 1µA, 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 200 @ 1A, 2V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: 6-TSOP
Part Status: Active
Description: TRANS PREBIAS 1PNP 1PNP 6-TSOP
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 PNP Pre-Biased, 1 PNP
Power - Max: 760mW
Current - Collector (Ic) (Max): 100mA, 1.8A
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
Current - Collector Cutoff (Max): 1µA, 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 200 @ 1A, 2V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: 6-TSOP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH