PBLS4004V,115 NXP Semiconductors
Hersteller: NXP Semiconductors
Trans Digital BJT NPN/PNP 50V 100mA/500mA 300mW Automotive AEC-Q101 6-Pin SOT-666 T/R
Produktrezensionen
Produktbewertung abgeben
Technische Details PBLS4004V,115 NXP Semiconductors
Description: TRANS PREBIAS 1NPN 1PNP SOT-666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 40V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V, Frequency - Transition: 300MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SOT-666.
Weitere Produktangebote PBLS4004V,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
PBLS4004V,115 | NXP USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP SOT-666Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 300mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V Frequency - Transition: 300MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-666 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PBLS4004V,115 |
![]() |
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP SOT-666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V
Frequency - Transition: 300MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-666
Description: TRANS PREBIAS 1NPN 1PNP SOT-666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V
Frequency - Transition: 300MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-666
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


