PBR941B,215 NXP Semiconductors
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Technische Details PBR941B,215 NXP Semiconductors
Description: RF TRANS NPN 10V 9GHZ TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 360mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz, Supplier Device Package: SOT-23 (TO-236AB).
Weitere Produktangebote PBR941B,215
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PBR941B,215 | Hersteller : NXP USA Inc. |
 Description: RF TRANS NPN 10V 9GHZ TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 360mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz Supplier Device Package: SOT-23 (TO-236AB) |
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PBR941B,215 | Hersteller : NXP USA Inc. |
Description: RF TRANS NPN 10V 9GHZ TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 360mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz Supplier Device Package: SOT-23 (TO-236AB) |
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PBR941B,215 | Hersteller : NXP Semiconductors |
RF Bipolar Transistors Single NPN 10V 50mA 360mW 100 9GHz |
Produkt ist nicht verfügbar |