PBR941B,215 NXP Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 181+ | 0.98 EUR |
| 223+ | 0.76 EUR |
| 230+ | 0.71 EUR |
| 290+ | 0.55 EUR |
| 312+ | 0.49 EUR |
| 342+ | 0.43 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.32 EUR |
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Technische Details PBR941B,215 NXP Semiconductors
Description: RF TRANS NPN 10V 9GHZ TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 360mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz, Supplier Device Package: SOT-23 (TO-236AB).
Weitere Produktangebote PBR941B,215
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
PBR941B,215 | NXP USA Inc. |
Description: RF TRANS NPN 10V 9GHZ TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 360mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz Supplier Device Package: SOT-23 (TO-236AB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
PBR941B,215 | NXP USA Inc. |
Description: RF TRANS NPN 10V 9GHZ TO236ABSupplier Device Package: SOT-23 (TO-236AB) Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz Frequency - Transition: 9GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Voltage - Collector Emitter Breakdown (Max): 10V Current - Collector (Ic) (Max): 50mA Power - Max: 360mW Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
PBR941B,215 | NXP Semiconductors |
RF Bipolar Transistors Single NPN 10V 50mA 360mW 100 9GHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PBR941B,215 |
![]() |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 10V 9GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 360mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Supplier Device Package: SOT-23 (TO-236AB)
Description: RF TRANS NPN 10V 9GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 360mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Supplier Device Package: SOT-23 (TO-236AB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PBR941B,215 |
![]() |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 10V 9GHZ TO236AB
Supplier Device Package: SOT-23 (TO-236AB)
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 50mA
Power - Max: 360mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 10V 9GHZ TO236AB
Supplier Device Package: SOT-23 (TO-236AB)
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 50mA
Power - Max: 360mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PBR941B,215 |
![]() |
Hersteller: NXP Semiconductors
RF Bipolar Transistors Single NPN 10V 50mA 360mW 100 9GHz
RF Bipolar Transistors Single NPN 10V 50mA 360mW 100 9GHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



