Technische Details PBSS4140V,115 NXP Semiconductors
Description: TRANS NPN 40V 1A SOT-666, Supplier Device Package: SOT-666, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 1 A.
Weitere Produktangebote PBSS4140V,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PBSS4140V,115 | NXP USA Inc. |
Description: TRANS NPN 40V 1A SOT-666 Supplier Device Package: SOT-666 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1 A |
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Im Einkaufswagen Stück im Wert von UAH |
| PBSS4140V,115 |
Hersteller: NXP USA Inc.
Description: TRANS NPN 40V 1A SOT-666
Supplier Device Package: SOT-666
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Description: TRANS NPN 40V 1A SOT-666
Supplier Device Package: SOT-666
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH