Technische Details PBSS5220V,115 Nexperia
Description: TRANS PNP 20V 2A SOT-666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 1A, 2V, Frequency - Transition: 185MHz, Supplier Device Package: SOT-666, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 900 mW.
Weitere Produktangebote PBSS5220V,115
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PBSS5220V,115 | Hersteller : Nexperia USA Inc. |
 Description: TRANS PNP 20V 2A SOT-666Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 1A, 2V Frequency - Transition: 185MHz Supplier Device Package: SOT-666 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 900 mW |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS5220V,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 20V 2A SOT-666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 1A, 2V Frequency - Transition: 185MHz Supplier Device Package: SOT-666 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 900 mW |
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