PDTA113EE,115 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 15000+ | 0.033 EUR |
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Technische Details PDTA113EE,115 NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SC75, Resistor - Emitter Base (R2): 1 kOhms, Resistor - Base (R1): 1 kOhms, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Obsolete, Supplier Device Package: SC-75, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).
Weitere Produktangebote PDTA113EE,115
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PDTA113EE,115 | Hersteller : NXP USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A SC75 Resistor - Emitter Base (R2): 1 kOhms Resistor - Base (R1): 1 kOhms Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: SC-75 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
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