PDTA115TMB,315 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: DFN1006B-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 100 kOhms
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Technische Details PDTA115TMB,315 NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Resistor - Base (R1): 100 kOhms, Frequency - Transition: 180 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: DFN1006B-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q100, Grade: Automotive.
Weitere Produktangebote PDTA115TMB,315 nach Preis ab 0.05 EUR bis 0.05 EUR
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PDTA115TMB,315 | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1006B-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Bulk Resistor - Base (R1): 100 kOhms Frequency - Transition: 180 MHz Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PDTA115TMB,315 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
Resistor - Base (R1): 100 kOhms
Frequency - Transition: 180 MHz
Qualification: AEC-Q100
Grade: Automotive
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
Resistor - Base (R1): 100 kOhms
Frequency - Transition: 180 MHz
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11225+ | 0.05 EUR |