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Technische Details PDTC114TMB315 NXP USA Inc.
Description: TRANS PREBIAS, Packaging: Bulk, Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V, Supplier Device Package: DFN1006B-3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 230 MHz, Resistor - Base (R1): 10 kOhms, Qualification: AEC-Q101.
Weitere Produktangebote PDTC114TMB315 nach Preis ab 0.057 EUR bis 0.12 EUR
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PDTC114TMB315 | NXP Semiconductors |
 Description: TRANS PREBIASPackaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Supplier Device Package: DFN1006B-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 |
auf Bestellung 276400 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTC114TMB315 | NEXPERIA |
Description: NEXPERIA - PDTC114TMB315 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 110000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTC114TMB315 | NXP Semiconductors |
Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin DFN-B T/R |
auf Bestellung 276400 Stücke: Lieferzeit 14-21 Tag (e) |
|
| PDTC114TMB315 |
|
Hersteller: NXP Semiconductors
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 276400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11225+ | 0.057 EUR |
| PDTC114TMB315 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - PDTC114TMB315 - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
Description: NEXPERIA - PDTC114TMB315 - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 110000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20000+ | 0.068 EUR |
| PDTC114TMB315 |
|
Hersteller: NXP Semiconductors
Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
auf Bestellung 276400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5301+ | 0.12 EUR |
| 10000+ | 0.11 EUR |
| 100000+ | 0.089 EUR |