PDTC123JE,115 NXP Semiconductors

Description: TRANS PREBIAS NPN 50V 0.1A SC75, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 2.2 kOhms, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Obsolete, Supplier Device Package: SC-75, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2.