PDTC143XQA147 NXP
Hersteller: NXP
Description: NXP - PDTC143XQA147 - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details PDTC143XQA147 NXP
Description: TRANS PREBIAS, Part Status: Active, Packaging: Bulk, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 230 MHz, Power - Max: 280 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: DFN1010D-3.
Weitere Produktangebote PDTC143XQA147
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PDTC143XQA147 | NXP USA Inc. |
Description: TRANS PREBIAS Part Status: Active Packaging: Bulk DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Qualification: AEC-Q101 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 280 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: DFN1010D-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PDTC143XQA147 |
|
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS
Part Status: Active
Packaging: Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: DFN1010D-3
Description: TRANS PREBIAS
Part Status: Active
Packaging: Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: DFN1010D-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH