Technische Details PDTC144EK,115 NXP
Description: TRANS PREBIAS NPN 50V 0.1A SMT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Supplier Device Package: SMT3; MPAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote PDTC144EK,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| PDTC144EK,115 | NXP/Nexperia/We-En |
 Транзистор цифровий, Структура = NPN, Uceo, В = 50, Ic, А = 0,1, Ptot, Вт = 0,25, R1, кОм = 47, R2, кОм = 47, Тексп, °С = -65...+150,... Транзистори Корпус: SMT-3 Од. вим: штAnzahl je Verpackung: 9000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
PDTC144EK,115 | NXP USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: SMT3; MPAK Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PDTC144EK,115 |
|
Hersteller: NXP/Nexperia/We-En
Транзистор цифровий, Структура = NPN, Uceo, В = 50, Ic, А = 0,1, Ptot, Вт = 0,25, R1, кОм = 47, R2, кОм = 47, Тексп, °С = -65...+150,... Транзистори Корпус: SMT-3 Од. вим: шт
Anzahl je Verpackung: 9000 Stücke
Транзистор цифровий, Структура = NPN, Uceo, В = 50, Ic, А = 0,1, Ptot, Вт = 0,25, R1, кОм = 47, R2, кОм = 47, Тексп, °С = -65...+150,... Транзистори Корпус: SMT-3 Од. вим: шт
Anzahl je Verpackung: 9000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDTC144EK,115 |
|
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH