Technische Details PH7030L,115 NXP
Description: MOSFET N-CH 30V 68A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote PH7030L,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
PH7030L,115 | NXP USA Inc. |
 Description: MOSFET N-CH 30V 68A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
PH7030L,115 | NXP USA Inc. |
Description: MOSFET N-CH 30V 68A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PH7030L,115 | Nexperia |
MOSFET N-CH TRENCH 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PH7030L,115 | NXP Semiconductors |
MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PH7030L,115 |
|
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 68A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 68A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PH7030L,115 |
|
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 68A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 30V 68A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PH7030L,115 |
|
Hersteller: Nexperia
MOSFET N-CH TRENCH 30V
MOSFET N-CH TRENCH 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PH7030L,115 |
|
Hersteller: NXP Semiconductors
MOSFET
MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH