PH9025L,115 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 66A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: LFPAK56, Power-SO8
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 62.5W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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Technische Details PH9025L,115 NXP USA Inc.
Description: MOSFET N-CH 25V 66A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: LFPAK56, Power-SO8, Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 62.5W (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote PH9025L,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PH9025L,115 | Nexperia |
Nexperia PWR-MOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PH9025L,115 |
|
Hersteller: Nexperia
Nexperia PWR-MOS
Nexperia PWR-MOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH