PHD36N03LT,118

Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 43.4A DPAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 43.4A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Power Dissipation (Max): 57.6W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V