PHK28NQ03LT,518
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auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details PHK28NQ03LT,518
Description: MOSFET N-CH 30V 23.7A 8SO, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 30.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 6.25W (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 23.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote PHK28NQ03LT,518
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PHK28NQ03LT,518 | NXP USA Inc. |
Description: MOSFET N-CH 30V 23.7A 8SO Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 30.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 6.25W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 23.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PHK28NQ03LT,518 | Nexperia |
MOSFET TAPE13 PWR-MOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PHK28NQ03LT,518 |
|
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 23.7A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 30.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 30V 23.7A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 30.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PHK28NQ03LT,518 |
|
Hersteller: Nexperia
MOSFET TAPE13 PWR-MOS
MOSFET TAPE13 PWR-MOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH