PHT6N06T,135 NXP USA Inc.

Description: MOSFET N-CH 55V 5.5A SOT223, Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SC-73, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 8.3W (Tc).