PHT6N06T,135 NXP Semiconductors
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1629+ | 0.34 EUR |
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Technische Details PHT6N06T,135 NXP Semiconductors
Description: MOSFET N-CH 55V 5.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V, Power Dissipation (Max): 8.3W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SC-73, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V.
Weitere Produktangebote PHT6N06T,135 nach Preis ab 0.34 EUR bis 0.39 EUR
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PHT6N06T,135 | Hersteller : NXP Semiconductors |
 Trans MOSFET N-CH 55V 5.5A 4-Pin(3+Tab) SC-73 T/R |
auf Bestellung 2040 Stücke: Lieferzeit 14-21 Tag (e) |
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PHT6N06T,135 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 55V 5.5A 4-Pin(3+Tab) SC-73 T/R |
auf Bestellung 6669 Stücke: Lieferzeit 14-21 Tag (e) |
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PHT6N06T,135 | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 55V 5.5A SOT223 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V Power Dissipation (Max): 8.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SC-73 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V |
auf Bestellung 8364 Stücke: Lieferzeit 10-14 Tag (e) |
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PHT6N06T,135 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 55V 5.5A 4-Pin(3+Tab) SC-73 T/R |
Produkt ist nicht verfügbar |
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PHT6N06T,135 | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 55V 5.5A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V Power Dissipation (Max): 8.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SC-73 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V |
Produkt ist nicht verfügbar |