Produkte > NXP > PHT8N06LT,135

PHT8N06LT,135 NXP


PHT8N06LT_2.pdf
Hersteller: NXP
SOT-223 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PHT8N06LT,135 NXP

Description: MOSFET N-CH 55V 3.5A SOT223, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: SC-73, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±13V.

Weitere Produktangebote PHT8N06LT,135

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PHT8N06LT,135 PHT8N06LT,135 NXP USA Inc. PHT8N06LT.pdf Description: MOSFET N-CH 55V 3.5A SOT223
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±13V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PHT8N06LT,135 PHT8N06LT,135 Nexperia PHT8N06LT-3083721.pdf MOSFETs N-CH TRENCH 55V 7.5A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PHT8N06LT,135 PHT8N06LT.pdf
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 3.5A SOT223
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±13V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PHT8N06LT,135 PHT8N06LT-3083721.pdf
Hersteller: Nexperia
MOSFETs N-CH TRENCH 55V 7.5A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH