PHX9NQ20T,127 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 200V 5.2A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 959 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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Technische Details PHX9NQ20T,127 NXP USA Inc.
Description: MOSFET N-CH 200V 5.2A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 959 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.
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PHX9NQ20T,127 | Hersteller : NXP Semiconductors |
MOSFET RAIL PWR-MOS |
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