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Technische Details PMBF4391,215 NXP Semiconductors
Description: JFET N-CH 40V SOT23, FET Type: N-Channel, Operating Temperature: 150°C (TJ), Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V, Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA, Resistance - RDS(On): 30 Ohms, Power - Max: 250 mW, Drain to Source Voltage (Vdss): 40 V, Supplier Device Package: SOT-23 (TO-236AB), Voltage - Breakdown (V(BR)GSS): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMBF4391,215
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PMBF4391,215 | Hersteller : NXP USA Inc. |
 Description: JFET N-CH 40V SOT23FET Type: N-Channel Operating Temperature: 150°C (TJ) Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA Resistance - RDS(On): 30 Ohms Power - Max: 250 mW Drain to Source Voltage (Vdss): 40 V Supplier Device Package: SOT-23 (TO-236AB) Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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PMBF4391,215 | Hersteller : NXP USA Inc. |
Description: JFET N-CH 40V SOT23 Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA Resistance - RDS(On): 30 Ohms Power - Max: 250 mW Drain to Source Voltage (Vdss): 40 V Supplier Device Package: SOT-23 (TO-236AB) Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |