PMBFJ110,215 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 µA
Resistance - RDS(On): 18 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 25 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details PMBFJ110,215 NXP USA Inc.
Description: JFET N-CH 25V SOT23, Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 15 V, Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 µA, Resistance - RDS(On): 18 Ohms, Power - Max: 250 mW, Drain to Source Voltage (Vdss): 25 V, Part Status: Obsolete, Supplier Device Package: SOT-23 (TO-236AB), Voltage - Breakdown (V(BR)GSS): 25 V, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS), FET Type: N-Channel, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMBFJ110,215
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMBFJ110,215 | Hersteller : NXP Semiconductors |
JFET JFET N-CH 25V 6MA |
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