Technische Details PMBFJ176,215 NXP
Description: JFET P-CH 30V SOT23, Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V, Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA, Resistance - RDS(On): 250 Ohms, Power - Max: 300 mW, Drain to Source Voltage (Vdss): 30 V, Part Status: Obsolete, Supplier Device Package: SOT-23 (TO-236AB), Voltage - Breakdown (V(BR)GSS): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS), FET Type: P-Channel, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMBFJ176,215
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PMBFJ176,215 | Hersteller : NXP USA Inc. |
 Description: JFET P-CH 30V SOT23Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA Resistance - RDS(On): 250 Ohms Power - Max: 300 mW Drain to Source Voltage (Vdss): 30 V Part Status: Obsolete Supplier Device Package: SOT-23 (TO-236AB) Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS) FET Type: P-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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PMBFJ176,215 | Hersteller : NXP Semiconductors |
JFET JFET P-CH 30V 1MA |
Produkt ist nicht verfügbar |