PMEG3020EPAS115 NXP USA Inc.
Hersteller: NXP USA Inc.Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN2020D-3
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2540+ | 0.19 EUR |
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Technische Details PMEG3020EPAS115 NXP USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY, Packaging: Bulk, Package / Case: 3-PowerUDFN, Mounting Type: Surface Mount, Supplier Device Package: DFN2020D-3, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Schottky, Capacitance @ Vr, F: 150pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A, Current - Reverse Leakage @ Vr: 2.5 mA @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMEG3020EPAS115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PMEG3020EPAS115 | Hersteller : NXP |
Description: NXP - PMEG3020EPAS115 - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |