PMEG4010AESBC315 NXP
Hersteller: NXP
Description: NXP - PMEG4010AESBC315 - MISCELLANEOUS MOSFETS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
| Anzahl | Privatkunde |
|---|---|
| 4578+ | 0.26 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
4578 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details PMEG4010AESBC315 NXP
Description: RECTIFIER DIODE, SCHOTTKY, Packaging: Bulk, Package / Case: 2-XDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 3.1 ns, Technology: Schottky, Capacitance @ Vr, F: 75pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DSN1006-2, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A, Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V.
Weitere Produktangebote PMEG4010AESBC315
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
PMEG4010AESBC315 | NXP USA Inc. |
Description: RECTIFIER DIODE, SCHOTTKY Packaging: Bulk Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.1 ns Technology: Schottky Capacitance @ Vr, F: 75pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DSN1006-2 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMEG4010AESBC315 |
|
Hersteller: NXP USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.1 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.1 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH