PMEG6010AESB315 NXP
Hersteller: NXP
Description: NXP - PMEG6010AESB315 - MISCELLANEOUS MOSFETS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details PMEG6010AESB315 NXP
Description: DIODE SCHOTTKY 60V 1A DSN10062, Part Status: Active, Current - Reverse Leakage @ Vr: 650 µA @ 60 V, Voltage - Forward (Vf) (Max) @ If: 625 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 60 V, Operating Temperature - Junction: 150°C, Supplier Device Package: DSN1006-2, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 20pF @ 10V, 1MHz, Technology: Schottky, Reverse Recovery Time (trr): 2.4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 2-XDFN, Packaging: Bulk.
Weitere Produktangebote PMEG6010AESB315
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
PMEG6010AESB315 | NXP USA Inc. |
Description: DIODE SCHOTTKY 60V 1A DSN10062 Part Status: Active Current - Reverse Leakage @ Vr: 650 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 625 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: 150°C Supplier Device Package: DSN1006-2 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 10V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 2.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMEG6010AESB315 |
|
Hersteller: NXP USA Inc.
Description: DIODE SCHOTTKY 60V 1A DSN10062
Part Status: Active
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 625 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: DSN1006-2
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 2.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Bulk
Description: DIODE SCHOTTKY 60V 1A DSN10062
Part Status: Active
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 625 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: DSN1006-2
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 2.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH