PMT29EN,115 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 6A SOT223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-73
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Technische Details PMT29EN,115 NXP USA Inc.
Description: MOSFET N-CH 30V 6A SOT223, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 820mW (Ta), 8.33W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: SC-73.
Weitere Produktangebote PMT29EN,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PMT29EN,115 | NXP USA Inc. |
Description: MOSFET N-CH 30V 6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SC-73 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 820mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMT29EN,115 |
|
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 6A SOT223
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Description: MOSFET N-CH 30V 6A SOT223
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH