PMT760EN,135 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 900MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 800mW (Ta), 6.2W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
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Technische Details PMT760EN,135 NXP USA Inc.
Description: MOSFET N-CH 100V 900MA SOT223, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 80 V, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: SC-73, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 800mW (Ta), 6.2W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 800mA, 10V, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PMT760EN,135 | NXP USA Inc. |
Description: MOSFET N-CH 100V 900MA SOT223 Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 80 V Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: SC-73 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 800mW (Ta), 6.2W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 800mA, 10V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMT760EN,135 |
|
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 900MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 80 V
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 800mW (Ta), 6.2W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 100V 900MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 80 V
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 800mW (Ta), 6.2W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH