PMT760EN,135 NXP USA Inc.

Description: MOSFET N-CH 100V 900MA SOT223, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 80 V, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: SC-73, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 800mW (Ta), 6.2W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 800mA, 10V, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.