Technische Details PRF13750HR9 NXP Semiconductors
Description: RF MOSFET LDMOS NI1230, Packaging: Strip, Package / Case: SOT-979A, Current Rating (Amps): 10µA, Frequency: 700MHz ~ 1.3GHz, Configuration: Dual, Power - Output: 650W, Gain: 20.6dB, Technology: LDMOS, Supplier Device Package: NI-1230-4H, Part Status: Obsolete, Voltage - Rated: 105 V.
Weitere Produktangebote PRF13750HR9
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PRF13750HR9 | NXP USA Inc. |
Description: RF MOSFET LDMOS NI1230 Packaging: Strip Package / Case: SOT-979A Current Rating (Amps): 10µA Frequency: 700MHz ~ 1.3GHz Configuration: Dual Power - Output: 650W Gain: 20.6dB Technology: LDMOS Supplier Device Package: NI-1230-4H Part Status: Obsolete Voltage - Rated: 105 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PRF13750HR9 |
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS NI1230
Packaging: Strip
Package / Case: SOT-979A
Current Rating (Amps): 10µA
Frequency: 700MHz ~ 1.3GHz
Configuration: Dual
Power - Output: 650W
Gain: 20.6dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Obsolete
Voltage - Rated: 105 V
Description: RF MOSFET LDMOS NI1230
Packaging: Strip
Package / Case: SOT-979A
Current Rating (Amps): 10µA
Frequency: 700MHz ~ 1.3GHz
Configuration: Dual
Power - Output: 650W
Gain: 20.6dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Obsolete
Voltage - Rated: 105 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH