Technische Details PRF13750HR9 NXP Semiconductors
Description: RF MOSFET LDMOS NI1230, Gain: 20.6dB, Power - Output: 650W, Configuration: Dual, Frequency: 700MHz ~ 1.3GHz, Current Rating (Amps): 10µA, Package / Case: SOT-979A, Packaging: Strip, Voltage - Rated: 105 V, Part Status: Obsolete, Supplier Device Package: NI-1230-4H, Technology: LDMOS.
Weitere Produktangebote PRF13750HR9
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PRF13750HR9 | NXP USA Inc. |
Description: RF MOSFET LDMOS NI1230 Gain: 20.6dB Power - Output: 650W Configuration: Dual Frequency: 700MHz ~ 1.3GHz Current Rating (Amps): 10µA Package / Case: SOT-979A Packaging: Strip Voltage - Rated: 105 V Part Status: Obsolete Supplier Device Package: NI-1230-4H Technology: LDMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PRF13750HR9 |
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS NI1230
Gain: 20.6dB
Power - Output: 650W
Configuration: Dual
Frequency: 700MHz ~ 1.3GHz
Current Rating (Amps): 10µA
Package / Case: SOT-979A
Packaging: Strip
Voltage - Rated: 105 V
Part Status: Obsolete
Supplier Device Package: NI-1230-4H
Technology: LDMOS
Description: RF MOSFET LDMOS NI1230
Gain: 20.6dB
Power - Output: 650W
Configuration: Dual
Frequency: 700MHz ~ 1.3GHz
Current Rating (Amps): 10µA
Package / Case: SOT-979A
Packaging: Strip
Voltage - Rated: 105 V
Part Status: Obsolete
Supplier Device Package: NI-1230-4H
Technology: LDMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH