PSMN6R0-25YLD115 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 43W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 1429+ | 0.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN6R0-25YLD115 NXP USA Inc.
Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Power Dissipation (Max): 43W (Ta), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 61A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Bulk.
Weitere Produktangebote PSMN6R0-25YLD115 nach Preis ab 0.34 EUR bis 0.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
PSMN6R0-25YLD115 | Hersteller : NXP Semiconductors |
Description: NEXPERIA PSMN6R0-25YLD - POWER F Packaging: Bulk |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|