PSMN6R0-25YLD115 NXP Semiconductors
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1429+ | 0.34 EUR |
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Technische Details PSMN6R0-25YLD115 NXP Semiconductors
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Ta), Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 43W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V.
Weitere Produktangebote PSMN6R0-25YLD115 nach Preis ab 0.34 EUR bis 0.34 EUR
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PSMN6R0-25YLD115 | Hersteller : NXP USA Inc. |
 Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Ta) Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 43W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN6R0-25YLD115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN6R0-25YLD115 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (27-Jun-2024) |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |