PSMN7R6-60XSQ NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 51.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
Description: MOSFET N-CH 60V 51.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
auf Bestellung 685 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 685+ | 0.81 EUR |
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Technische Details PSMN7R6-60XSQ NXP USA Inc.
Description: MOSFET N-CH 60V 51.5A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 1mA, Supplier Device Package: TO-220F, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V.
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PSMN7R6-60XSQ | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 60V 51.5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V |
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