Technische Details RF1K49092 FAIRCHILD
Description: P-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V, 775pF @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 5V, 130mOhm @ 2.5A, 5V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 24nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote RF1K49092
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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RF1K49092 | Fairchild Semiconductor |
Description: P-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V, 775pF @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 5V, 130mOhm @ 2.5A, 5V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 24nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
RF1K49092 | ON Semiconductor / Fairchild |
MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RF1K49092 |
![]() |
Hersteller: Fairchild Semiconductor
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V, 775pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 5V, 130mOhm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 24nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V, 775pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 5V, 130mOhm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 24nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RF1K49092 |
![]() |
Hersteller: ON Semiconductor / Fairchild
MOSFET
MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



